RF1K49154
vs
MMDF1N05E
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERSIL CORP
MOTOROLA SEMICONDUCTOR PRODUCTS
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
Additional Feature
ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
2 A
Drain-source On Resistance-Max
0.15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
1.5 W
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
155 ns
Turn-on Time-Max (ton)
50 ns
Base Number Matches
3
3
Package Description
,
Drain Current-Max (Abs) (ID)
1.5 A
Compare RF1K49154 with alternatives