RF1K4909296
vs
RF1K4909296
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
INTERSIL CORP
Reach Compliance Code
unknown
unknown
Additional Feature
MEGAFET
MEGAFET
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
12 V
12 V
Drain Current-Max (ID)
3.5 A
3.5 A
Drain-source On Resistance-Max
0.05 Ω
0.05 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
N-CHANNEL AND P-CHANNEL
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
YES
Terminal Finish
NOT SPECIFIED
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Package Description
SMALL OUTLINE, R-PDSO-G8
ECCN Code
EAR99
Compare RF1K4909296 with alternatives
Compare RF1K4909296 with alternatives