RF1K4909096
vs
FDS9926A
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
12 V
20 V
Drain Current-Max (ID)
3.5 A
6.5 A
Drain-source On Resistance-Max
0.05 Ω
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
3
Part Package Code
SOT
Package Description
SO-8
Pin Count
8
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
20 A
Time@Peak Reflow Temperature-Max (s)
30
Compare RF1K4909096 with alternatives
Compare FDS9926A with alternatives