RB751L-40 vs LRB751V-40T1G feature comparison

RB751L-40 Galaxy Microelectronics

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LRB751V-40T1G LRC Leshan Radio Co Ltd

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Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD LESHAN RADIO CO LTD
Part Package Code DFN1006-2
Package Description R-PBCC-N2 SC-76, 2 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.37 V 0.37 V
JESD-30 Code R-PBCC-N2 R-PDSO-G2
Non-rep Pk Forward Current-Max 0.2 A 0.2 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 0.03 A 0.03 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER SMALL OUTLINE
Rep Pk Reverse Voltage-Max 40 V 40 V
Reverse Current-Max 0.5 µA
Reverse Test Voltage 30 V
Surface Mount YES YES
Technology SCHOTTKY SCHOTTKY
Terminal Form NO LEAD GULL WING
Terminal Position BOTTOM DUAL
Base Number Matches 1 2
Rohs Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.2 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare RB751L-40 with alternatives

Compare LRB751V-40T1G with alternatives