RB155(G) vs RB155 feature comparison

RB155(G) Galaxy Microelectronics

Buy Now Datasheet

RB155 Changzhou Starsea Electronics Co Ltd

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD CHANGZHOU STARSEA ELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 600 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 1.5 A 1.5 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Base Number Matches 2 31
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code O-PBCY-W4
Number of Terminals 4
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Reverse Current-Max 10000 µA
Reverse Test Voltage 600 V
Terminal Form WIRE
Terminal Position BOTTOM

Compare RB155(G) with alternatives