R6030KNXC7
vs
SIHF28N60EF-GE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
ROHM CO LTD
VISHAY INTERTECHNOLOGY INC
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
ROHM Semiconductor
Vishay
Avalanche Energy Rating (Eas)
636 mJ
691 mJ
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
30 A
28 A
Drain-source On Resistance-Max
0.13 Ω
0.123 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
80 A
75 A
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
19 Weeks
Compare R6030KNXC7 with alternatives
Compare SIHF28N60EF-GE3 with alternatives