R6030ENZ4C13
vs
IPP60R125C6
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Not Recommended
Ihs Manufacturer
ROHM CO LTD
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
18 Weeks
Date Of Intro
2018-10-10
Samacsys Manufacturer
ROHM Semiconductor
Infineon
Avalanche Energy Rating (Eas)
636 mJ
636 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
30 A
30 A
Drain-source On Resistance-Max
0.13 Ω
0.125 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
80 A
89 A
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
JESD-609 Code
e3
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
219 W
Qualification Status
Not Qualified
Terminal Finish
Tin (Sn)
Compare R6030ENZ4C13 with alternatives
Compare IPP60R125C6 with alternatives