QS8883-25PM
vs
QS8883-25LR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
QUALITY SEMICONDUCTOR INC
QUALITY SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
Access Time-Max
25 ns
25 ns
JESD-30 Code
R-PDIP-T24
R-CQCC-N28
Memory Density
65536 bit
65536 bit
Memory IC Type
CACHE TAG SRAM
CACHE TAG SRAM
Memory Width
4
4
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
24
28
Number of Words
16384 words
16384 words
Number of Words Code
16000
16000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
70 °C
Operating Temperature-Min
-55 °C
Organization
16KX4
16KX4
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
YES
Package Body Material
PLASTIC/EPOXY
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
QCCN
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
CHIP CARRIER
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
YES
Technology
CMOS
CMOS
Temperature Grade
MILITARY
COMMERCIAL
Terminal Form
THROUGH-HOLE
NO LEAD
Terminal Position
DUAL
QUAD
Base Number Matches
1
1
Rohs Code
JESD-609 Code
e0
Package Equivalence Code
LCC28,.35X.55
Standby Current-Max
0.015 A
Supply Current-Max
0.115 mA
Terminal Finish
TIN LEAD
Terminal Pitch
1.27 mm
Compare QS8883-25PM with alternatives
Compare QS8883-25LR with alternatives