QS8881-25P
vs
QS8885-25DB
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
QUALITY SEMICONDUCTOR INC
QUALITY SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
Access Time-Max
25 ns
25 ns
I/O Type
SEPARATE
COMMON
JESD-30 Code
R-PDIP-T28
R-GDIP-T24
JESD-609 Code
e0
e0
Memory Density
65536 bit
65536 bit
Memory IC Type
CACHE TAG SRAM
CACHE TAG SRAM
Memory Width
4
4
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
28
24
Number of Words
16384 words
16384 words
Number of Words Code
16000
16000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
125 °C
Operating Temperature-Min
-55 °C
Organization
16KX4
16KX4
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
YES
Package Body Material
PLASTIC/EPOXY
CERAMIC, GLASS-SEALED
Package Code
DIP
DIP
Package Equivalence Code
DIP28,.3
DIP24,.3
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Current-Max
0.015 A
0.02 A
Standby Voltage-Min
4.5 V
4.5 V
Supply Current-Max
0.11 mA
0.13 mA
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
MILITARY
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Screening Level
38535Q/M;38534H;883B
Compare QS8881-25P with alternatives
Compare QS8885-25DB with alternatives