QS3VH257S1G
vs
QS3VH257S1G8
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
RENESAS ELECTRONICS CORP
|
| Part Package Code |
SOIC
|
SOIC
|
| Package Description |
GREEN, SOIC-16
|
SOIC-16
|
| Pin Count |
16
|
16
|
| Reach Compliance Code |
unknown
|
compliant
|
| Family |
CB3Q/3VH/3C/2B
|
CB3Q/3VH/3C/2B
|
| JESD-30 Code |
R-PDSO-G16
|
R-PDSO-G16
|
| JESD-609 Code |
e3
|
e3
|
| Length |
9.9 mm
|
9.9 mm
|
| Logic IC Type |
BUS EXCHANGER
|
BUS EXCHANGER
|
| Moisture Sensitivity Level |
1
|
3
|
| Number of Bits |
4
|
2
|
| Number of Functions |
1
|
4
|
| Number of Ports |
2
|
3
|
| Number of Terminals |
16
|
16
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Output Polarity |
TRUE
|
TRUE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
SOP
|
SOP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Propagation Delay (tpd) |
0.2 ns
|
0.2 ns
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Seated Height-Max |
1.7272 mm
|
1.72 mm
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
YES
|
YES
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Width |
3.9116 mm
|
3.9 mm
|
| Base Number Matches |
3
|
2
|
| Rohs Code |
|
Yes
|
| Manufacturer Package Code |
|
DCG16
|
| HTS Code |
|
8542.39.00.01
|
| Samacsys Manufacturer |
|
Renesas Electronics
|
| Control Type |
|
ENABLE LOW
|
| Count Direction |
|
UNIDIRECTIONAL
|
| Load Capacitance (CL) |
|
50 pF
|
| Package Equivalence Code |
|
SOP16,.25
|
| Packing Method |
|
TR
|
| Technology |
|
CMOS
|
|
|
|
Compare QS3VH257S1G with alternatives
Compare QS3VH257S1G8 with alternatives