Findchips: Compare QP7C199-55DMB vs 5962-8866203XA

QP7C199-55DMB vs 5962-8866203XA feature comparison

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Rohs Code	No	No
Part Life Cycle Code	Active	Obsolete
Ihs Manufacturer	TELEDYNE E2V (UK) LTD	MOTOROLA SEMICONDUCTOR PRODUCTS
Package Description	DIP, DIP28,.3	DIP, DIP28,.6
Reach Compliance Code	compliant	unknown
ECCN Code	3A001.A.2.C
HTS Code	8542.32.00.41
Access Time-Max	55 ns	55 ns
I/O Type	COMMON	COMMON
JESD-30 Code	R-XDIP-T28	R-XDIP-T28
Memory Density	262144 bit	262144 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM
Memory Width	8	8
Number of Terminals	28	28
Number of Words	32768 words	32768 words
Number of Words Code	32000	32000
Operating Mode	ASYNCHRONOUS	ASYNCHRONOUS
Operating Temperature-Max	125 °C	125 °C
Operating Temperature-Min	-55 °C	-55 °C
Organization	32KX8	32KX8
Output Characteristics	3-STATE	3-STATE
Package Body Material	CERAMIC	CERAMIC
Package Code	DIP	DIP
Package Equivalence Code	DIP28,.3	DIP28,.6
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL
Qualification Status	Not Qualified	Not Qualified
Screening Level	38535Q/M;38534H;883B	38535Q/M;38534H;883B
Standby Voltage-Min	4.5 V	4.5 V
Supply Current-Max	0.125 mA	0.15 mA
Supply Voltage-Nom (Vsup)	5 V	5 V
Surface Mount	NO	NO
Technology	CMOS	CMOS
Temperature Grade	MILITARY	MILITARY
Terminal Form	THROUGH-HOLE	THROUGH-HOLE
Terminal Pitch	2.54 mm	2.54 mm
Terminal Position	DUAL	DUAL
Base Number Matches	1	16
JESD-609 Code		e0
Power Supplies		5 V
Standby Current-Max		0.02 A
Terminal Finish		Tin/Lead (Sn/Pb)
	Memory » SRAMs	Memory » SRAMs