Q67040-S4566 vs SPB21N50C3 feature comparison

Q67040-S4566 Infineon Technologies AG

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SPB21N50C3 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Rating (Eas) 690 mJ 690 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 21 A 21 A
Drain-source On Resistance-Max 0.19 Ω 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 63 A 63 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code D2PAK
Pin Count 4
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 208 W
Qualification Status Not Qualified
Terminal Finish Tin (Sn)
Transistor Application SWITCHING

Compare Q67040-S4566 with alternatives

Compare SPB21N50C3 with alternatives