PUMH11
vs
PUMH16/T1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
1997-07-11
Samacsys Manufacturer
Nexperia
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
BUILT IN BIAS RESISTOR RATIO 2.1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Base Capacitance-Max
2.5 pF
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
80
JESD-30 Code
R-PDSO-G6
R-PDSO-G6
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
2
2
Number of Terminals
6
6
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.3 W
Reference Standard
AEC-Q101; IEC-60134
Surface Mount
YES
YES
Terminal Finish
TIN
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
230 MHz
VCEsat-Max
0.15 V
Base Number Matches
3
1
Pbfree Code
Part Package Code
SC-88
Package Description
SMALL OUTLINE, R-PDSO-G6
Pin Count
6
Qualification Status
Not Qualified
Compare PUMH11 with alternatives
Compare PUMH16/T1 with alternatives