PUMD9T/R vs UMD9NFHATR feature comparison

PUMD9T/R Nexperia

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UMD9NFHATR ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer NEXPERIA ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G6 SC-88, 6 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-01
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 68
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3 e2
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN AND PNP NPN AND PNP
Surface Mount YES YES
Terminal Finish TIN Tin/Copper (Sn/Cu)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Factory Lead Time 18 Weeks
Samacsys Manufacturer ROHM Semiconductor
Reference Standard AEC-Q101
Transition Frequency-Nom (fT) 250 MHz

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