PUMD2
vs
PUMD2,115
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Date Of Intro
1997-07-11
Samacsys Manufacturer
Nexperia
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Base Capacitance-Max
2.5 pF
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
60
60
JESD-30 Code
R-PDSO-G6
R-PDSO-G6
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
2
2
Number of Terminals
6
6
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
NPN AND PNP
NPN AND PNP
Power Dissipation-Max (Abs)
0.3 W
0.3 W
Reference Standard
IEC-60134
Surface Mount
YES
YES
Terminal Finish
TIN
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
230 MHz
VCEsat-Max
0.15 V
Base Number Matches
3
2
Part Package Code
TSSOP
Package Description
PLASTIC, SC-88, 6 PIN
Pin Count
6
Manufacturer Package Code
SOT363
Qualification Status
Not Qualified
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