PSMN4R0-40YS
vs
PH4840S
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NEXPERIA
|
Package Description |
PLASTIC, LFPAK-4
|
LFPAK-4
|
Pin Count |
235
|
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
NXP
|
|
Avalanche Energy Rating (Eas) |
77 mJ
|
250 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
40 V
|
40 V
|
Drain Current-Max (ID) |
100 A
|
94.5 A
|
Drain-source On Resistance-Max |
0.0042 Ω
|
0.0048 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
MO-235
|
|
JESD-30 Code |
R-PSSO-G4
|
R-PSSO-G4
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
106 W
|
|
Pulsed Drain Current-Max (IDM) |
472 A
|
283 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Date Of Intro |
|
2017-02-01
|
|
|
|
Compare PSMN4R0-40YS with alternatives
Compare PH4840S with alternatives