PSMN130-200D,118
vs
FQD18N20V2TF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
NXP SEMICONDUCTORS
ROCHESTER ELECTRONICS LLC
Part Package Code
DPAK
Package Description
PLASTIC, DPAK-3
LEAD FREE, DPAK-3
Pin Count
3
3
Manufacturer Package Code
SOT428
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.75
Avalanche Energy Rating (Eas)
252 mJ
340 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
20 A
15 A
Drain-source On Resistance-Max
0.13 Ω
0.14 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PDSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
80 A
60 A
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
YES
YES
Terminal Finish
TIN
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Compare PSMN130-200D,118 with alternatives
Compare FQD18N20V2TF with alternatives