PSMN070-200B/T3
vs
IRFS31N20D
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NEXPERIA
INFINEON TECHNOLOGIES AG
Package Description
PLASTIC, D2PAK-3
D2PAK-3/2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
2017-02-01
Avalanche Energy Rating (Eas)
462 mJ
420 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
35 A
31 A
Drain-source On Resistance-Max
0.07 Ω
0.082 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
140 A
124 A
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Samacsys Manufacturer
Infineon
Moisture Sensitivity Level
1
Compare PSMN070-200B/T3 with alternatives
Compare IRFS31N20D with alternatives