PSMN038-100K/T3
vs
PSMN038-100K
feature comparison
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
NEXPERIA
|
PHILIPS SEMICONDUCTORS
|
Package Description |
SMALL OUTLINE, R-PDSO-G8
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
2017-02-01
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
100 V
|
|
Drain Current-Max (ID) |
6.3 A
|
6.3 A
|
Drain-source On Resistance-Max |
0.038 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
MS-012AA
|
|
JESD-30 Code |
R-PDSO-G8
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
8
|
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
2
|
3
|
Rohs Code |
|
Yes
|
Moisture Sensitivity Level |
|
2
|
Operating Temperature-Max |
|
150 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation-Max (Abs) |
|
3.5 W
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare PSMN038-100K/T3 with alternatives