PR3003G vs 1N5402GHB0G feature comparison

PR3003G Diodes Incorporated

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1N5402GHB0G Taiwan Semiconductor

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer DIODES INC TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-201AD
Package Description O-PALF-W2
Pin Count 2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1 V
JEDEC-95 Code DO-201AD DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Recovery Time-Max 0.15 µs
Surface Mount NO NO
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 40 10
Base Number Matches 2 1
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Reference Standard AEC-Q101
Reverse Current-Max 5 µA

Compare PR3003G with alternatives

Compare 1N5402GHB0G with alternatives