PMN48XP,115 vs FDC638P feature comparison

PMN48XP,115 NXP Semiconductors

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FDC638P Rochester Electronics LLC

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS ROCHESTER ELECTRONICS LLC
Part Package Code TSOP SOT
Pin Count 6 6
Manufacturer Package Code SOT457
Reach Compliance Code compliant unknown
ECCN Code EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 4.1 A 4.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 1.28 W
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 3
Pbfree Code Yes
Package Description LEAD FREE, SUPERSOT-6
DS Breakdown Voltage-Min 20 V
Drain-source On Resistance-Max 0.048 Ω
JESD-30 Code R-PDSO-G6
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status COMMERCIAL
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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