PMN34UN
vs
PMWD30UN
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
NEXPERIA
|
PHILIPS SEMICONDUCTORS
|
Package Description |
SC-74, 6 PIN
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
2017-02-01
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
30 V
|
|
Drain Current-Max (ID) |
4.9 A
|
5 A
|
Drain-source On Resistance-Max |
0.054 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G6
|
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
|
Number of Terminals |
6
|
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN
|
Matte Tin (Sn)
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
3
|
2
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
2.3 W
|
|
|
|
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