PMEG6010ETR
vs
JAN1N6101
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
LINFINITY MICROELECTRONICS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.80
Application
EFFICIENCY
GENERAL PURPOSE
Configuration
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.53 V
1 V
JESD-30 Code
R-PDSO-F2
R-PDIP-T14
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
50 A
Number of Elements
1
Number of Phases
1
Number of Terminals
2
14
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
Output Current-Max
1 A
0.3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max
0.68 W
0.6 W
Reference Standard
AEC-Q101; IEC-60134
MIL-19500/474E
Rep Pk Reverse Voltage-Max
60 V
65 V
Reverse Current-Max
60 µA
0.025 µA
Reverse Recovery Time-Max
0.0044 µs
0.005 µs
Reverse Test Voltage
60 V
20 V
Surface Mount
YES
NO
Technology
SCHOTTKY
Terminal Finish
Pure Tin (Sn)
TIN LEAD
Terminal Form
FLAT
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
2
7
Package Description
DIP-14
JESD-609 Code
e0
Qualification Status
Not Qualified
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