PMBZ5256BTRL
vs
PMBZ5256B-T
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-G3
|
R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Knee Impedance-Max |
600 Ω
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.35 W
|
0.35 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Voltage-Nom |
30 V
|
30 V
|
| Reverse Current-Max |
0.1 µA
|
0.1 µA
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Voltage Temp Coeff-Max |
27.3 mV/°C
|
25.5 mV/°C
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
4.2 mA
|
|
| Base Number Matches |
2
|
1
|
| Additional Feature |
|
TEMPERATURE COEFFICIENT IS TYPICAL
|
| Operating Temperature-Max |
|
150 °C
|
|
|
|
Compare PMBZ5256BTRL with alternatives
Compare PMBZ5256B-T with alternatives