PMBTA13,215 vs PMBTA13TRL13 feature comparison

PMBTA13,215 NXP Semiconductors

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PMBTA13TRL13 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Factory Lead Time 4 Weeks
Samacsys Manufacturer NXP
Collector Current-Max (IC) 0.5 A 0.3 A
Configuration DARLINGTON DARLINGTON
DC Current Gain-Min (hFE) 10000 10000
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 125 MHz 125 MHz
VCEsat-Max 1.5 V 1.5 V
Base Number Matches 1 1
Pbfree Code Yes
Collector-Emitter Voltage-Max 20 V

Compare PMBTA13,215 with alternatives

Compare PMBTA13TRL13 with alternatives