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PMBT5551/T3 vs PMBT5550,215 feature comparison

PMBT5551/T3 NXP Semiconductors

Buy Now Datasheet

PMBT5550,215 NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code SOT-23 TO-236
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.3 A 0.3 A
Collector-Base Capacitance-Max 6 pF 6 pF
Collector-Emitter Voltage-Max 160 V 140 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 20
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 100 MHz
VCEsat-Max 0.2 V 0.25 V
Base Number Matches 2 2
Manufacturer Package Code SOT23
HTS Code 8541.21.00.95
Moisture Sensitivity Level 1
Power Dissipation-Max (Abs) 0.35 W
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare PMBT5551/T3 with alternatives

Compare PMBT5550,215 with alternatives