PMBD2835 vs BAW56W135 feature comparison

PMBD2835 YAGEO Corporation

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BAW56W135 NXP Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer PHILIPS COMPONENTS NXP SEMICONDUCTORS
Package Description R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 2 2
Number of Terminals 3 3
Output Current-Max 0.1 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Recovery Time-Max 0.015 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 3 2
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.2 W
Reference Standard IEC-60134
Rep Pk Reverse Voltage-Max 90 V
Reverse Current-Max 1 µA
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

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