PLVA662AT/R
vs
PLVA662ATRL13
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Package Description
R-PDSO-G3
R-PDSO-G3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2017-02-01
Additional Feature
LOW IMPEDANCE, LOW NOISE
LOW NOISE, LOW VOLTAGE AVALANCHE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.25 W
0.25 W
Reference Voltage-Nom
6.2 V
6.2 V
Surface Mount
YES
YES
Technology
AVALANCHE
ZENER
Terminal Finish
TIN
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Voltage Tol-Max
3.23%
Working Test Current
0.25 mA
0.25 mA
Base Number Matches
3
1
Pbfree Code
Qualification Status
Not Qualified
Reverse Current-Max
0.05 µA
Voltage Temp Coeff-Max
2.65 mV/°C
Compare PLVA662AT/R with alternatives
Compare PLVA662ATRL13 with alternatives