PLAD30KP51CA
vs
PLAD30KP51CAE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Package Description
PLASTIC PACKAGE-1
S-PSSO-G1
Reach Compliance Code
compliant
unknown
Breakdown Voltage-Max
95.1 V
62.7 V
Breakdown Voltage-Min
77.8 V
56.7 V
Breakdown Voltage-Nom
86.45 V
59.7 V
Clamping Voltage-Max
82.4 V
82.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
S-PSSO-G1
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
30000 W
30000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
SQUARE
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
51 V
51 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
18
13
Pin Count
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Moisture Sensitivity Level
1
Compare PLAD30KP51CA with alternatives
Compare PLAD30KP51CAE3TR with alternatives