PLAD30KP36E3 vs PLAD30KP36TRE3 feature comparison

PLAD30KP36E3 Microsemi Corporation

Buy Now Datasheet

PLAD30KP36TRE3 Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Package Description S-PSSO-G1
Pin Count 1
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 48.9 V 8.82 V
Breakdown Voltage-Min 40 V 7.22 V
Breakdown Voltage-Nom 44.45 V 8.02 V
Clamping Voltage-Max 64.3 V 64.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 36 V 36 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 12 1
Case Connection CATHODE

Compare PLAD30KP36E3 with alternatives

Compare PLAD30KP36TRE3 with alternatives