PJA3472B_R2_00001 vs 2N7002H6327XTSA2 feature comparison

PJA3472B_R2_00001 PanJit Semiconductor

Buy Now Datasheet

2N7002H6327XTSA2 Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer PANJIT Infineon
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.3 A 0.3 A
Drain-source On Resistance-Max 3 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES YES
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Factory Lead Time 17 Weeks, 5 Days
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Feedback Cap-Max (Crss) 3 pF
Moisture Sensitivity Level 1
Qualification Status Not Qualified

Compare PJA3472B_R2_00001 with alternatives

Compare 2N7002H6327XTSA2 with alternatives