PHX2N40E
vs
BUK545-200A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
Package Description
PLASTIC, FULLPACK-3
,
Pin Count
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
190 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
2.4 A
7.6 A
Drain-source On Resistance-Max
1.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
60 pF
JESD-30 Code
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
30 W
Pulsed Drain Current-Max (IDM)
9.6 A
Qualification Status
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
105 ns
Turn-on Time-Max (ton)
80 ns
Base Number Matches
2
3
Rohs Code
JESD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
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