PHT8N06LT115 vs IRFL4105PBF feature comparison

PHT8N06LT115 NXP Semiconductors

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IRFL4105PBF International Rectifier

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PDSO-G4 SOT-223, 3 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Rating (Eas) 30 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 3.5 A 3.7 A
Drain-source On Resistance-Max 0.08 Ω 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PSSO-G3
Number of Elements 1 1
Number of Terminals 4 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-261AA
Pin Count 3
HTS Code 8541.29.00.95
JEDEC-95 Code TO-261AA
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation Ambient-Max 2.1 W
Power Dissipation-Max (Abs) 1 W
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

Compare PHT8N06LT115 with alternatives

Compare IRFL4105PBF with alternatives