PHT8N06LT/T3 vs IRFL4105PBF feature comparison

PHT8N06LT/T3 NXP Semiconductors

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IRFL4105PBF International Rectifier

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS INTERNATIONAL RECTIFIER CORP
Part Package Code SOT-223 TO-261AA
Package Description SMALL OUTLINE, R-PDSO-G4 SOT-223, 3 PIN
Pin Count 4 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Avalanche Energy Rating (Eas) 30 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 2.2 A 3.7 A
Drain-source On Resistance-Max 0.08 Ω 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PSSO-G3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 4 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Pbfree Code Yes
Rohs Code Yes
HTS Code 8541.29.00.95
JEDEC-95 Code TO-261AA
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation Ambient-Max 2.1 W
Power Dissipation-Max (Abs) 1 W
Time@Peak Reflow Temperature-Max (s) 30

Compare PHT8N06LT/T3 with alternatives

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