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PHT11N06LT,135 vs PHT11N06LT,135 feature comparison

PHT11N06LT,135 NXP Semiconductors

Buy Now Datasheet

PHT11N06LT,135 Nexperia

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NEXPERIA
Part Package Code SC-73 SC-73
Pin Count 4 4
Manufacturer Package Code SOT223 SOT223
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 60 mJ 60 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 4.9 A 4.9 A
Drain-source On Resistance-Max 0.04 Ω 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF 150 pF
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 8.3 W 8.3 W
Power Dissipation-Max (Abs) 1.8 W 1.8 W
Pulsed Drain Current-Max (IDM) 19 A 19 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 210 ns 210 ns
Turn-on Time-Max (ton) 125 ns 125 ns
Base Number Matches 1 1
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

Compare PHT11N06LT,135 with alternatives

Compare PHT11N06LT,135 with alternatives