PHN103T/T3 vs BSO220N03MSG feature comparison

PHN103T/T3 NXP Semiconductors

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BSO220N03MSG Infineon Technologies AG

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS INFINEON TECHNOLOGIES AG
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8 GREEN, PLASTIC PACKAGE-8
Pin Count 8 8
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 8.6 A 6.1 A
Drain-source On Resistance-Max 0.03 Ω 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 3
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 2.5 W
Terminal Finish MATTE TIN

Compare PHN103T/T3 with alternatives

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