PHC21025
vs
SI6993DQ-T1-E3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
PHILIPS SEMICONDUCTORS
VISHAY SILICONIX
Package Description
,
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e4
e3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
2 W
1.14 W
Surface Mount
YES
YES
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
MATTE TIN
Base Number Matches
3
2
Pbfree Code
Part Package Code
TSSOP
Pin Count
8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
3.6 A
Drain-source On Resistance-Max
0.031 Ω
JESD-30 Code
R-PDSO-G8
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
20
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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