PHB8N50
vs
PHB8N50T/R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
PHILIPS SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PSSO-G2
,
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
510 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
8.7 A
8.7 A
Drain-source On Resistance-Max
0.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
35 A
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Base Number Matches
2
2
Rohs Code
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
147 W
Terminal Finish
Tin/Lead (Sn/Pb)
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