PHB110NQ08T
vs
IRFU3607PBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
PHILIPS SEMICONDUCTORS
INFINEON TECHNOLOGIES AG
Package Description
,
IN-LINE, R-PSIP-T3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
75 A
80 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
140 W
Surface Mount
YES
NO
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn) - with Nickel (Ni) barrier
Base Number Matches
3
2
Factory Lead Time
12 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
120 mJ
Case Connection
DRAIN
DS Breakdown Voltage-Min
75 V
Drain-source On Resistance-Max
0.009 Ω
JEDEC-95 Code
TO-251AA
JESD-30 Code
R-PSIP-T3
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
310 A
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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