PGSMAJ58AE3G
vs
P4SMAJ58ADF-13
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
DIODES INC
|
| Package Description |
R-PDSO-C2
|
R-PDSO-F2
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Date Of Intro |
2018-07-17
|
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
EXCELLENT CLAMPING CAPABILITY
|
| Breakdown Voltage-Max |
71.2 V
|
71.2 V
|
| Breakdown Voltage-Min |
64.4 V
|
64.4 V
|
| Breakdown Voltage-Nom |
67.8 V
|
|
| Clamping Voltage-Max |
93.6 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Forward Voltage-Max (VF) |
3.5 V
|
|
| JEDEC-95 Code |
DO-214AC
|
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-F2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
400 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Standard |
AEC-Q101
|
IEC-61000-4-2
|
| Rep Pk Reverse Voltage-Max |
58 V
|
58 V
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Test Voltage |
58 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
C BEND
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
32 Weeks
|
| Samacsys Manufacturer |
|
Diodes Incorporated
|
|
|
|
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