PGSMAJ51AHR3G vs SMAJ51A feature comparison

PGSMAJ51AHR3G Taiwan Semiconductor

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SMAJ51A SynSemi Inc

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SYNSEMI INC
Package Description SMA, 2 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 62.7 V
Breakdown Voltage-Min 56.7 V
Breakdown Voltage-Nom 59.7 V
Clamping Voltage-Max 82.4 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 51 V
Reverse Current-Max 1 µA
Reverse Test Voltage 51 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 58

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