PGSMAJ28CAHE3G vs SMAFJ28C feature comparison

PGSMAJ28CAHE3G Taiwan Semiconductor

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SMAFJ28C LRC Leshan Radio Co Ltd

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Rohs Code Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD LESHAN RADIO CO LTD
Package Description SMA, 2 PIN R-PDSO-F2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-07-17
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 34.4 V 34.4 V
Breakdown Voltage-Min 31.1 V 31.1 V
Breakdown Voltage-Nom 32.75 V
Clamping Voltage-Max 45.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 28 V 28 V
Reverse Current-Max 1 µA
Reverse Test Voltage 28 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 2

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