PGSMAJ13AM2G vs SMAJ13A feature comparison

PGSMAJ13AM2G Taiwan Semiconductor

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SMAJ13A Transpro Electronics Corp

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TRANSPRO ELECTRONICS CORP
Package Description R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-07-17
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 15.9 V
Breakdown Voltage-Min 14.4 V
Breakdown Voltage-Nom 15.15 V
Clamping Voltage-Max 21.5 V 21.5 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 13 V 13 V
Reverse Current-Max 1 µA
Reverse Test Voltage 13 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 59

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