PG308R_B0_10001 vs RGP30KZ feature comparison

PG308R_B0_10001 PanJit Semiconductor

Buy Now Datasheet

RGP30KZ Galaxy Microelectronics

Buy Now Datasheet
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer PAN JIT INTERNATIONAL INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application EFFICIENCY FAST RECOVERY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.3 V
JEDEC-95 Code DO-201AD DO-27
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Rep Pk Reverse Voltage-Max 800 V 800 V
Reverse Current-Max 1 µA 5 µA
Reverse Recovery Time-Max 0.5 µs 0.5 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Rohs Code Yes
Package Description O-PALF-W2

Compare PG308R_B0_10001 with alternatives

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