PG200R_R2_00001 vs 2A01GB0G feature comparison

PG200R_R2_00001 PanJit Semiconductor

Buy Now Datasheet

2A01GB0G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PANJIT INTERNATIONAL INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.1 V
JEDEC-95 Code DO-15 DO-204AC
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 70 A 70 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 2 A 2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 1 µA 5 µA
Reverse Recovery Time-Max 0.15 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 1 1
Package Description DO-15, 2 PIN
Additional Feature LOW POWER LOSS
JESD-609 Code e3
Terminal Finish MATTE TIN

Compare PG200R_R2_00001 with alternatives

Compare 2A01GB0G with alternatives