PESD1CAN,215 vs PESD1CANG feature comparison

PESD1CAN,215 NXP Semiconductors

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PESD1CANG Galaxy Microelectronics

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Rohs Code Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code TO-236
Package Description PLASTIC, SMD, 3 PIN
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 30.3 V 30.3 V
Breakdown Voltage-Min 25.4 V 25.4 V
Breakdown Voltage-Nom 27.8 V 27.8 V
Clamping Voltage-Max 70 V 70 V
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 200 W 200 W
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard AEC-Q101, IEC-60134; IEC-61000-4-2, 4-5 IEC-61000-4-2,4-5
Rep Pk Reverse Voltage-Max 24 V 24 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 2
Reverse Current-Max 0.05 µA
Reverse Test Voltage 24 V

Compare PESD1CAN,215 with alternatives

Compare PESD1CANG with alternatives