PEMH10,115 vs NSBC143EPDXV6T5G feature comparison

PEMH10,115 NXP Semiconductors

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NSBC143EPDXV6T5G onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS ON SEMICONDUCTOR
Part Package Code SOT
Package Description PLASTIC PACKAGE-6 SMALL OUTLINE, R-PDSO-F6
Pin Count 6 6
Manufacturer Package Code SOT666 CASE 463A-01
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer NXP
Additional Feature BUILT IN BIAS RESISTOR RATIO 21.36 BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 15
JESD-30 Code R-PDSO-F6 R-PDSO-F6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN AND PNP
Power Dissipation-Max (Abs) 0.3 W 0.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

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Compare NSBC143EPDXV6T5G with alternatives