PEMD10 vs NSBC123EPDXV6T5 feature comparison

PEMD10 Nexperia

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NSBC123EPDXV6T5 onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NEXPERIA ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 1999-05-20
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21 BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 8
JESD-30 Code R-PDSO-F6 R-PDSO-F6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN AND PNP NPN AND PNP
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
Pin Count 6
Manufacturer Package Code CASE 463A-01
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified

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