PDTD114EQAZ
vs
PDTD113ZQAZ
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
NEXPERIA
NEXPERIA
Part Package Code
DFN
DFN
Package Description
DFN1010D-3, 3 PIN
DFN1010D-3, 3 PIN
Pin Count
3
3
Manufacturer Package Code
SOT1215
SOT1215
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Nexperia
Nexperia
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
BUILT IN BIAS RESISTANCE RATIO IS 10
Case Connection
COLLECTOR
COLLECTOR
Collector Current-Max (IC)
0.5 A
0.5 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
70
70
JESD-30 Code
R-PDSO-N3
R-PDSO-N3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
NPN
NPN
Reference Standard
AEC-Q101; IEC-60134
AEC-Q101; IEC-60134
Surface Mount
YES
YES
Terminal Finish
TIN
TIN
Terminal Form
NO LEAD
NO LEAD
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
210 MHz
210 MHz
Base Number Matches
1
1
Compare PDTD114EQAZ with alternatives
Compare PDTD113ZQAZ with alternatives