PDTC144EE/T4
vs
MMBT2222AWT1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NEXPERIA
MOTOROLA INC
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
2017-02-01
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.6 A
Collector-Emitter Voltage-Max
50 V
40 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE
DC Current Gain-Min (hFE)
80
40
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
6
HTS Code
8541.21.00.75
Collector-Base Capacitance-Max
8 pF
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
0.15 W
Power Dissipation-Max (Abs)
0.15 W
Qualification Status
Not Qualified
Terminal Finish
Tin/Lead (Sn/Pb)
Transition Frequency-Nom (fT)
300 MHz
Turn-off Time-Max (toff)
285 ns
Turn-on Time-Max (ton)
35 ns
VCEsat-Max
1 V
Compare PDTC144EE/T4 with alternatives
Compare MMBT2222AWT1 with alternatives